Doped crystalline titanyl arsenates and preparation thereof
AssigneeE. I. Du Pont de Nemours and Company
InventorsAlbert A. Ballman, Lap K. Cheng
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Abstract
Doped crystalline compositions (e.g., single domain crystals) of MTiOAsO.sub.4 (wherein M is K, Rb and/or Cs) are disclosed which contain at least about 10 ppm total of Fe, Sc and/or In dopant. Also disclosed is a flux process which is characterized by adding said dopant to a melt containing the components for forming MTiOAsO.sub.4, in an amount effective to provide a doped single domain crystal of MTiOAsO.sub.4 containing at least 10 ppm of said dopant.
Claims10
A process for producing a single crystal of MTiOAsO.sub.4 wherein M is selected from the group consisting of K, Rb, Cs and mixtures thereof, comprising the steps of preparing a homogeneous melt containing the components for forming MTiOAsO.sub.4 and a flux comprising oxides of M and As;
- introducing a seed crystal of MTiOAsO.sub.4 in the melt;
- actuating the controlled crystallization on the seed crystal;
- and continuing the crystallization until formation of the crystal is completed, characterized by:
- producing a single domaon crystal by adding to said melt at least one dopant selected from the group consisting of Fe, Sc, In in an amount totalling at least about 0.01 percent by weight, based upon the total amount of MTiOAsO.sub.4 formable from the components in the melt, effective to provide a doped single domain crystal of MTiOAsO.sub.4 containing at least 10 ppm of said dopant.
Dependencies are inferred from the claim text.