Ring crystallization of wafers to prevent thermal shock
AssigneeTexas Instruments Incorporated
InventorsKendall S. Wills, Paul A. Rodriguez, Melvin L. Brewer
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Abstract
A ring of polycrystalline material is developed around the edge of a wafer by general heating of the wafer and localized heating with a laser beam followed by rapid cooling. The ring of polycrystalline material helps prevent wafer breakage due to thermal shock. One or more additional ring, loop or closed figures of polycrystalline material can be formed inside of said ring of polycrystalline material developed around the edge of the wafer to further reinforce the wafer.
Claims18
A semiconductor wafer resistant to thermal shock, comprising:
- a non-polycrystalline wafer;
- and
- a ring, loop or closed figure of polycrystalline material formed around an edge of said wafer.
A semiconductor wafer resistant to thermal shock, comprising:
- a non-polycrystalline wafer, said wafer having a bottom surface, a device surface opposite said bottom surface, an edge;
- and
- a ring, loop or closed figure of polycrystalline material formed around said edge of said wafer.
A semiconductor wafer resistant to cracking or breakage caused by device fabrication processes, comprising:
- a non-polycrystalline wafer, said wafer having a bottom surface, a device surface opposite said bottom surface, an edge;
- and
- a ring, loop or closed figure of polycrystalline material formed within said wafer, extending from said bottom surface toward, but not including, said device surface.
Dependencies are inferred from the claim text.