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US 5,317,175 AGranted
CMOS device with perpendicular channel current directions
AssigneeNissan Motor Co., Ltd.
InventorKraisorn Throngnumchai
Life of this patent
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Abstract
P channel MOSFET and N channel MOSFET are formed in a (011) orientated semiconductor surface in such a manner that the channel of the P channel MOSFET is perpendicular to the channel of the N channel MOSFET. This arrangement can reduce a total channel resistance. The P channel MOSFET is formed so that the channel is parallel to the <011> direction, for example, and the N channel MOSFET is formed so that the channel is perpendicular to the <011> direction.
Claims15
A semiconductor device comprising:
- a first pair of source and drain regions which form a P channel MOSFET, and which are formed in a (011) oriented semiconductor substrate comprising a first surface of a (011) crystal plane;
- and
- a second pair of source and drain regions which form an N channel MOSFET and which are formed in said (011) oriented semiconductor substrate;
- wherein said source and drain regions of said P channel and N channel MOSFETs are arranged so that a first direction of a main current component flowing in said P channel MOSFET is substantially perpendicular to a second direction of a main current component flowing in said N channel MOSFET;
- wherein at least one of said source regions and said drain regions of at least one of said P channel and N channel MOSFETs comprises first and second portions which are separated from each other, and which are different in lateral geometry from each other.
2 more elements
A semiconductor device comprising:
- a first pair of source and drain regions which form a P channel MOSFET, and which are formed in a (011) oriented semiconductor substrate comprising a first surface of a (011) crystal plane;
- and
- a second pair of source and drain regions which form an N channel MOSFET and which are formed in said (011) oriented semiconductor substrate;
- wherein said source and drain regions of said P channels and N channel MOSFETs are arranged so that a fist direction of a main current component flowing in said P channel MOSFET is substantially perpendicular to a second direction of a main current component flowing in said N channel MOSFET;
- wherein said source and drain regions of said P channel MOSFET are formed in an N-type substrate region which is formed in said (011) semiconductor substrate, and said source and drain regions of said N channel MOSFET are formed in a P-type substrate region which is formed in said (011) semiconductor substrate, and wherein all of said regions extend into said (011) semiconductor surface from said first surface;
- and
- wherein each of said source and drain regions of said P channel and N channel MOSFETs comprises a plurality of stripe zones lying in said first surface of said (011) semiconductor substrate, and wherein said stripe zones of said source and drain regions of said P channel MOSFET alternate with each other and all extend in parallel along said second direction in said first surface of said (011) semiconductor substrate, and said stripe zones of said source and drain regions of said N channel MOSFET alternate with each other and all extend in parallel along said first direction in said first surface of said (011) semiconductor substrate.
4 more elements
A semiconductor device comprising:
- a pair of P.sup.+ -type source and drain regions which form a P channel MOSFET, and which are formed in a (011) oriented semiconductor substrate comprising a first surface of a (011) crystal plane;
- and
- a pair of N.sup.+ -type source and drain regions which form an N channel MOSFET and which are formed in said (011) oriented semiconductor substrate;
- wherein said source region of said N channel MOSFET comprises a plurality of first N.sup.+ -type source portions and a plurality of second N.sup.+ -type source portions, said drain region of said N channel MOSFET comprises a plurality of first N.sup.+ -type drain portions and a plurality of second N.sup.+ -type drain portions, said source region of said P channel MOSFET comprises a plurality of first P.sup.+ -type source portions and a plurality of second P.sup.+ -type source portions, and said drain region of said P channel MOSFET comprises a plurality of first P.sup.+ -type drain portions and a plurality of second P.sup.+ -type drain portions;
- and
- wherein each of said first second source portions and said first and second drain portions of said N channel and P channel MOSFETs is substantially in a form of a rectangle having two parallel first sides and two parallel second sides in a lateral pattern of a semiconductor device, the first sides of the rectangles of the first and second source portions and said first and second drain portions of said N channel MOSFET are substantially parallel to said <011>
- direction of said (011) semiconductor substrate, the first sides of the rectangles of the first and second source portions and said first and second drain portions of said P channel MOSFET are substantially perpendicular to said <011>
- direction of said (011) semiconductor substrate,
- the length of said first sides of said first source portions of said N channel MOSFET are greater than each of the length of said second sides of said first source portions of said N channel MOSFET, the length of said first sides of said second source portions of said N channel MOSFET and the length of said second sides of said second source portions of said N channel MOSFET, and
- the length of said first sides of said first source portions of said P channel MOSFET are greater than each of the length of said second sides of said first source portions of said P channel MOSFET, the length of said first sides of said second source portions of said P channel MOSFET and the length of said second sides of said second source portions of said P channel MOSFET.
7 more elements
Dependencies are inferred from the claim text.