Radiation-hardened memory storage device for space applications
AssigneeTRW Inc.
InventorsTimothy A. Yokote, Thomas J. Gritzmacher
Life of this patent
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Abstract
A radiation-hard dynamic random access memory (DRAM) device having reduced sensitivity to single event upset and latchup. The radiation-hard DRAM device includes a high-density configuration of transistors that have undergone neutron bombardment. The high-density configuration of transistors reduces sensitivity to single event upset, but increases sensitivity to latchup. Neutron bombardment reduces the increased sensitivity to single event latchup to effectively provide permanent latchup immunity.
Claims11
A radiation-hard dynamic random access memory (DRAM) device having reduced sensitivity to single event upset and latchup, comprising:
- a high-density configuration of transistors that have been exposed to neutron bombardment substantially higher rate than the rate of naturally occurring neutron bombardment.
A method for storing data in a space environment that reduces sensitivity to single event upset and latchup, comprising the step of:
- storing the data in a dynamic random access (DRAM) device having a high-density configuration of transistors that have been exposed to neutron bombardment substantially higher rate than the rate of naturally occurring neutron bombardment.
A method for reducing sensitivity of a dynamic random access memory (DRAM) device to single event latchup, comprising the step of:
- exposing the DRAM device to neutron bombardment.
Dependencies are inferred from the claim text.