Monolithic focal plane array
AssigneeGrumman Aerospace Corporation
InventorAllen L. Solomon
Life of this patent
Estimating the term…
Abstract
An integrated circuit wafer is formed as a monolithic focal plane array having signal processing circuitry formed upon a first surface thereof and infrared detector elements formed upon a second surface thereof. A process for forming the same is also disclosed. The wafer has an array of waffle-like hollows formed upon one surface. The floor of each hollow has a dense array of small diameter vias formed thereon. The vias extend through the wafer to the second surface thereof. Conductive conduits are formed through the hollows and vias to connect infrared detectors on the second side of the wafer to their associated signal processing circuitry formed upon the first side of the wafer.
Claims15
A single crystalline wafer having first and second surfaces, the wafer having the structural integrity required to survive the fabrication of integrated circuitry upon its first and second surfaces, the wafer comprising:
- (a) at least one hollow formed in the first surface of the wafer, said hollow having a floor and beveled sides;
- (b) a plurality of apertures which extend from the floor of each hollow, through the floor of the hollow, to the second surface of the wafer;
- and
- (c) wherein the wafer is at least an order of magnitude thicker than the diameter of said apertures.
A detector interface board for facilitating electrical communication between circuitry disposed upon a first surface of the board and an array of detector elements disposed upon an opposing second surface of the board, the board comprising:
- (a) a wafer comprising at least one hollow having a floor and beveled side walls formed in the first surface of the wafer;
- (b) a plurality of apertures formed through the floor of each hollow, the apertures extending from the floor of each hollow to the wafer second surface;
- (c) a plurality of first conductive conduits formed within each of the apertures;
- (d) a corresponding number of second conductive conduits which extend along the hollow sidewalls from the apertures;
- (e) a body of polysilicon formed within each of said hollows;
- (f) a single crystalline layer formed upon the wafer first surface;
- (g) a plurality of third conductive conduits formed upon the wafer second surface, each of said third conductive conduits being connected to a dedicated aperture;
- (h) a single crystalline layer graphotaxially formed upon the wafer second surface;
- (i) an array of detector elements formed upon the single crystalline layer of the wafer second surface, each of said detector elements being connected to a dedicated aperture by the third conductive conduits;
- and
- (j) signal processing circuitry formed upon the single crystalline layer, said signal processing circuitry being connected to the first conductive conduits.
Dependencies are inferred from the claim text.