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AssigneeThe Board of Trustees of the Leland Stanford Junior University
InventorWieslaw A. Lukaszek
Estimating the term…
A unipolar charge monitoring device for use in characterizing semiconductor fabrication equipment and processes includes a semiconductor substrate of one conductivity type, a source region and a drain region formed in first and second spaced surface regions of opposite conductivity type in the substrate with a channel region between the source region and the drain region, a control gate spaced from and in alignment with the channel region, a floating gate between and spaced from said control gate and the channel region, a charge collection electrode above and electrically connected to the control electrode, and a diode connecting the charge collection electrode to the substrate whereby the charge collection electrode collects charge of only one potential. In one embodiment, the unipolar charge monitoring device further includes a conductive electrode spaced from the charge collecting electrode and ohmically connected to the substrate for monitoring surface charge dissipation. In other embodiments, the unipolar charge monitoring device floating gate is separated from the source region by a tunnel oxide, and a metal layer is spaced from the charge collection electrode and overlapping a portion of the charge collection electrode whereby the unipolar charge monitoring device monitors above-the-wafer charge conduction.
A unipolar charge monitoring device for use in characterizing semiconductor fabrication equipment and processes comprising:
A charge monitoring device for use in characterizing semiconductor fabrication equipment and processes comprising:
A charge monitoring device for use in characterizing semiconductor fabrication equipment and processes comprising:
Dependencies are inferred from the claim text.