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US 5,315,135 AGranted
Semiconductor device having I.sup.2 L gate with heterojunction
AssigneeRohm Co., Ltd.
InventorShigeyuki Ueda
Life of this patent
Estimating the term…
Abstract
In a semiconductor device having I.sup.2 L gate, on a first conducting type semiconductor layer, a first semiconductor region with a second conducting type and a wider band gap than that of the semiconductor layer and a second semiconductor region with a second conducting type and a narrower band gap than that of the semiconductor layer are formed, and on the second semiconductor region, a third semiconductor region with the first conducting type is formed.
Claims2
A semiconductor device having I.sup.2 L gate, comprising:
- a semiconductor layer having a first conductivity type and having a band gap;
- a first semiconductor region formed on and in contact with said semiconductor layer, said first semiconductor region having a second conductivity type and a wider band gap than that of said semiconductor layer;
- a second semiconductor region formed on and in contact with said semiconductor layer, said second semiconductor region having a second conductivity type and a narrower band gap than that of said semiconductor layer;
- and
- a third semiconductor region formed on said second semiconductor region and having a first conductivity type.
2 more elements
Dependencies are inferred from the claim text.