US 5,315,134 AGranted

Thyristor with insulated gate

AssigneeKabushiki Kaisha Toshiba

InventorsTsuneo Ogura, Kiminori Watanabe, Akio Nakagawa, Yoshihiro Yamaguchi, Norio Yasuhara, Tomoko Matsudai

Life of this patent

Estimating the term…

Loading patent…

Abstract

A thyristor with an insulated gate includes a p-type emitter layer, an n-type base layer, a p-type base layer, and an n-type emitter layer. A drain electrode contacting the p-type base layer is formed adjacent to one side of the n-type emitter layer. An n-type drain layer, which is short-circuited with the p-type base layer by the drain electrode, is formed. An n-type source layer is formed a predetermined distance away from the n-type drain layer. A turn-off insulated gate is formed between the n-type source layer and the n-type drain layer. A source electrode is connected to a cathode electrode. Thereby, turn-off capability of the thyristor can be improved.

Claims16

Dependent claims

A thyristor having an insulated gate, said thyristor comprising:

a base layer of a first conductivity type having a high resistance;
a base layer of a second conductivity type formed on a surface of said base layer of said first conductivity type;
an emitter layer of said second conductivity type connected to said base layer of said second conductivity type via said base layer of said first conductivity type;
an emitter layer of said first conductivity type formed within said base layer of said second conductivity type;
a drain electrode formed on said base layer of said second conductivity type at a position adjacent to said emitter layer of said first conductivity type;
a drain layer of said first conductivity type which is formed within said base layer of said second conductivity type and which forms a short circuit with said base layer of said second conductivity type via said drain electrode;
a source layer of said first conductivity type formed within said base layer of said second conductivity type and positioned a predetermined distance from said drain layer of said first conductivity type;
a turn-off insulated gate electrode formed on a gate insulating film which is in turn formed on said base layer of said second conductivity type between said drain layer of said first conductivity type and said source layer of said first conductivity type;
a first main electrode formed on said emitter layer of said second conductivity type;
a second main electrode formed on said emitter layer of said first conductivity type;
and
a source electrode formed on said source layer of said first conductivity type and connected to said second main electrode.

9 more elements

A thyristor having an insulated gate, said thyristor comprising:

a base layer of a first conductivity type having a high resistance;
a base layer of a second conductivity type formed on a surface of said base layer of said first conductivity type;
an emitter layer of said second conductivity type connected to said base layer of said second conductivity type via said base layer of said first conductivity type;
an emitter layer of said first conductivity type consisting of a plurality of separately defined regions of said first conductivity type formed within said base layer of said second conductivity type;
a drain electrode formed on said base layer of said second conductivity type at a position adjacent to said emitter layer of said first conductivity type;
a drain layer of said first conductivity type formed within said base layer of said second conductivity type at a position adjacent to said emitter layer of said first conductivity type, said drain layer of said first conductivity type forming a short circuit with said base layer of said second conductivity type via said drain electrode;
a turn-off insulated gate electrode formed on a gate insulating film which is in turn formed on said base layer of said second conductivity type between said drain layer of said first conductivity type and said emitter layer of said first conductivity type;
a first main electrode formed on said emitter layer of said second conductivity type;
and
a second main electrode formed on said emitter layer of said first conductivity type.

7 more elements

A thyristor having an insulated gate, said thyristor comprising:

a base layer of a first conductivity type having a high resistance;
a base layer of a second conductivity type formed on a surface of said base layer of said first conductivity type;
an emitter layer of said second conductivity type connected to said base layer of said second conductivity type via said base layer of said first conductivity type;
an emitter layer of said first conductivity type formed within said base layer of said second conductivity type;
a first drain layer of said first conductivity type formed within said base layer of said second conductivity type at a position adjacent to said emitter layer of said first conductivity type;
a second drain layer of said first conductivity type formed within said base layer of said second conductivity type at a position with respect to said first drain layer of said first conductivity type such that said emitter layer of said first conductivity type is formed therebetween;
an insulated gate electrode formed on a gate insulating film which in turn is formed on said base layer of said second conductivity type between said emitter layer of said first conductivity type and said second drain layer of said first conductivity type;
a first main electrode formed on said emitter layer of said second conductivity type;
a second main electrode formed on said emitter layer of said first conductivity type and on said base layer of said second conductivity type so as to form a short circuit therebetween;
and a short circuit electrode which connects said first drain layer and said second drain layer.

7 more elements

Dependencies are inferred from the claim text.