High resolution, multi-layer resist for microlithography and method therefor
AssigneeArizona Board of Regents
InventorsMichael N. Kozicki, Shao-Wen Hsia
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Abstract
A high resolution, multi-layer resist for use in microlithography and a method is disclosed. The resist consists of a planarized layer deposited onto a substrate and an active layer, consisting of arsenic sulfide and silver is deposited onto the planarized layer. Irradiation with light, or other source of irradiation causes the silver to ionically diffuse into the arsenic sulfide, thereby creating a non-phase separate ternary chalcogenide glass. Removal of either the reacted or unreacted ternary compound will provide a positive or negative mask which may be used in subsequent processing or left as an intermetal dielectric as part of the underlying circuitry.
Claims26
A method for forming a multi-layer resist material for microlithography, comprising the steps of:
- depositing a planarized layer onto a substrate,
- depositing an active layer onto the surface of the planarized layer, said active layer comprising a layer of arsenic sulfide and a layer of silver metal, said layer of arsenic sulfide consisting essentially of about 28-37 at % As and about 63-72 at % S;
- exposing said active layer to radiation, thereby doping exposed portions of said silver layer into said arsenic sulfide layer and forming an silver-doped arsenic sulfide region,
- removing unexposed silver from said arsenic sulfide layer,
- etching one of said arsenic sulfide layer or said silver-doped arsenic sulfide region,
- etching said planarized layer underlying said etched arsenic sulfide or said silver-doped arsenic sulfide region, at least one of stripping said arsenic sulfide silver doped area or etching said silver-doped arsenic sulfide region, thereby forming a resist pattern capable of better than one-half micron resolution microlithography.
A multi-layer resist material for microlithography, comprising:
- a substrate;
- a planarized layer deposited onto said substrate;
- and
- an active layer deposited onto said planarized layer, said active layer comprising a layer of arsenic sulfide and a layer of silver, wherein said active layer forms a non-phase separated ternary compound upon exposure to irradiation.
Dependencies are inferred from the claim text.