Method and apparatus for measuring deviation between patterns on a semiconductor wafer

An apparatus for measuring deviation between elements on an object, comprising:

• irradiation means for irradiating an object with light beams, said irradiation means irradiating first and second physicooptical elements formed on the object with the light beams, the first and second physicooptical elements having lens functions;
• detection means for detecting incident positions of two light beams travelling from the first and second physicooptical elements, having been subjected to the lens functions of the first and second physicooptical elements, on a light-receiving surface;
• and
• measurement means for measuring the deviation between the first and second physicooptical elements on the object from the relationship between the detected incident positions of the two light beams.

An exposure apparatus, comprising:

• first holding means for holding an exposure original;
• second holding means for holding an object to which the exposure original is exposed and from which a pattern is transferred;
• irradiation means for irradiating the object held by said second holding means with light beams, said irradiation means irradiating first and second physicooptical elements formed on the object with the light beams, the first and second physicooptical elements having lens functions;
• detection means for detecting incident positions of two light beams travelling from the first and second physicooptical elements, having been subjected to the lens functions of the first and second physicooptical elements, on a light-receiving surface;
• and
• measurement means for measuring the deviation between the first and second physicooptical elements on the object from the relationship between the detected incident positions of the two light beams.