Multilayer interconnection structure for a semiconductor device

An interconnection structure of a semiconductor device having multilayer interconnection layers connected through a connection hole, comprising:

• a first interconnection layer,
• an insulating layer formed on said first interconnection layer having a through hole reaching the surface of said first interconnection layer, and
• a second interconnection layer formed on said insulating layer, electrically connected to said first interconnection layer through said through hole,
• wherein said first interconnection layer comprises
• a first conductive layer containing aluminum or an aluminum alloy,
• a second conductive layer formed on said first conductive layer, said second conductive layer comprising a material selected from the group consisting of tungsten, tungsten silicide and molybdenum silicide, and
• a third conductive layer formed on said second conductive layer,
• wherein said second interconnection layer further comprises a main conductive layer which becomes a main portion of said second interconnection layer, a first titanium nitride containing layer formed on said main conductive layer, a second titanium nitride containing layer formed beneath said main conductive layer, and a titanium containing layer formed beneath said second titanium nitride containing layer, having contact with said second conductive layer through said through hole,
• wherein the etching speed of said second conductive layer is less than that of said third conductive layer under condition of etching said insulating layer with a selected etchant,
• and further wherein light reflectivity of said third conductive layer is less than that of said second conductive layer.