Process for the preparation of a high dielectric thin film using ECR plasma CVD
AssigneeFujitsu Limited
InventorsKanetake Takasaki, Satoshi Nakai
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Abstract
A process for the preparation of a high dielectric thin film. A tantalum oxide film is formed on a substrate at a temperature of from 400.degree. to 850.degree. C. by means of an electron cyclotron resonance plasma chemical vapor deposition (ECR plasma CVD) method. A high dielectric film having little leakage current, good surface flatness and good step coverage is obtained.
Claims3
A process for the preparation of a high dielectric thin film, which comprises forming a tantalum oxide film on a substrate at a temperature of from 400.degree. to 850.degree. C. by means of an electron cyclotron resonance plasma chemical vapor deposition (ECR plasma CVD) method, wherein the tantalum oxide film is a Ta.sub.2 O.sub.5 film, and the tantalum source for the tantalum oxide film is selected from the group consisting of ethoxy tantalum (Ta(OC.sub.2 H.sub.5).sub.5) and tantalum chloride.
Dependencies are inferred from the claim text.