US 5,310,989 A · Method for laser-assisted etching of III-V and II-VI semiconductor compounds using chlorofluorocarbon ambients

Abstract

An etching process allows a selective single-step patterning of III-V or VI semiconductor compound devices such as GaAs and InP or CdS and ZnSe in a noncorrosive environment. The etching relies on a maskless laser-assisted technique in a gaseous chlorofluorocarbon ambient, such as gaseous dichlorodifluoromethane and chloropentafluoroethane. Laser-assisted photothermal chemical etching reactions on the III-V or II-VI semiconductor compounds occur in these ambients when the incident fluence from an excimer laser at 248 nm exceeds the melt threshold. This provides a means for thin membrane formation in III-V or II-VI semiconductor compounds, rapid etches and processing of packaged devices or partially fabricated dies. The reduction in processing steps as compared to conventional wet chemical etches provides improvements in yield, reliability and cost.

Claims26

Dependent claims

An apparatus for maskless laser-assisted etching of III-V semiconductor compound sample in a gaseous chlorofluorocarbon ambient comprising:

a source of said gaseous chlorofluorocarbon ambient;
a chamber sized to contain said III-V semiconductor compound sample therein and coupled to said source of said gaseous chlorofluorocarbon ambient to receive said gaseous chlorofluorocarbon ambient therein to provide said gaseous chlorofluorocarbon ambient in contact with said III-V semiconductor compound sample;
an emitter of radiant energy oriented to direct said radiant energy into said chamber and onto said III-V semiconductor compound sample in contact with said gaseous chlorofluorocarbon ambient, said radiant energy being emitted at a sufficient level to create a melted portion of said III-V semiconductor compound sample where the radiant energy impinges to etch away only said melted portion of said III-V semiconductor compound in contact with said gaseous chlorofluorocarbon ambient which has said radiant energy impinging thereon.

Dependencies are inferred from the claim text.

Method for laser-assisted etching of III-V and II-VI semiconductor compounds using chlorofluorocarbon ambients

Life of this patent

Method for laser-assisted etching of III-V and II-VI semiconductor compounds using chlorofluorocarbon ambients

Life of this patent

Abstract

Claims26