Method of patterning a reflective surface in an integrated circuit
AssigneeSGS-Thomson Microelectronics S.A.
InventorJohn C. Sardella
Life of this patent
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Abstract
A method for patterning a reflective surface in an integrated circuit. A first photoresist layer is formed over a conductive layer in the integrated circuit. A second photoresist layer is then formed over the first photoresist layer, where the transmittance of the first photoresist layer is less than the transmittance of the second photoresist layer. The first and second photoresist layers are exposed to define a masking pattern, and portions of the first and second masking layers are then removed to form a mask which corresponds to the masking pattern. Finally, the conductive layer is patterned using the mask formed by the first and second photoresist layers.
Claims19
A method for fabricating an integrated circuit structure, comprising the steps of:
- forming a first photoresist layer over a conductive layer on the integrated circuit;
- forming a second photoresist layer over the first photoresist layer, wherein the transmittance of the first photoresist layer is less than the transmittance of the second photoresist layer;
- simultaneously exposing the first and second photoresist layers to define a masking pattern;
- removing portions of the first and second photoresist layers to leave remaining portions forming a mask corresponding to the masking pattern;
- and
- patterning the conductive layer utilizing the mask formed by the first and second photoresist layers.
A method for fabricating an integrated circuit, comprising the steps of:
- forming a conductive structure on an underlying substrate region in the integrated circuit;
- forming an insulating layer over the integrated circuit;
- forming a conductive layer over the insulating layer;
- forming a first photoresist layer over a conductive layer on the integrated circuit;
- forming a second photoresist layer over the first photoresist layer, wherein the transmittance of the second photoresist layer is greater than the transmittance of the first photoresist layer;
- simultaneously exposing the first and second photoresist layers to define a masking pattern;
- removing portions of the first and second photoresist layers to leave remaining portions forming a mask corresponding to the masking pattern;
- and
- patterning the conductive layer utilizing the mask formed by the first and second photoresist layers.
Dependencies are inferred from the claim text.