Above via metal-to-metal antifuse

A method for fabricating a metal-to-metal antifuse comprising the steps of:

• forming and defining a first metal interconnect layer;
• forming an interlayer dielectric layer, said interlayer dielectric layer having an upper surface;
• forming an antifuse via in said interlayer dielectric layer to expose said first metal interconnect layer;
• forming a metal layer in said antifuse via;
• forming a substantially planar surface comprising said metal layer of conducting material, a planarizing material, and said upper surface of said interlayer dielectric layer;
• forming an antifuse material layer over said substantially planar surface;
• forming a metal capping layer over said antifuse material layer;
• and
• defining said antifuse material layer and said metal capping layer.

A method for fabricating a metal-to-metal antifuse comprising the steps of:

• forming and defining a first metal interconnect layer;
• forming an interlayer dielectric layer;
• forming an antifuse via in said interlayer dielectric layer to expose said first metal interconnect layer;
• depositing and defining a via metal layer into a portion of the volume defining said antifuse via;
• forming a planarizing layer of an insulating material in said antifuse via sufficient to fill a portion of said volume defining said antifuse via not occupied by said via metal layer;
• etching said planarizing layer to expose an upper surface of said via metal layer and an upper surface of said interlayer dielectric layer so as to form a substantially planar surface comprising said upper surface of said interlayer dielectric layer, said planarizing layer, and said upper surface of said via metal layer and to form spacers at edges of said via metal layer;
• forming an antifuse material layer over said substantially planar surface;
• forming a metal capping layer over said antifuse material layer;
• and
• defining said antifuse material layer and said metal capping layer.

A method for fabricating a metal-to-metal antifuse comprising the steps of:

• forming and defining a first metal interconnect layer;
• forming an interlayer dielectric layer;
• forming an antifuse via in said interlayer dielectric layer to expose said first metal interconnect layer;
• depositing a via metal layer into a portion of the volume defining said antifuse via;
• forming a planarizing layer of an insulating material in said antifuse via sufficient to fill a remaining portion of said volume defining said antifuse via;
• etching said planarizing layer to expose an upper surface of said via metal layer so as to form a substantially planar surface comprising said planarizing layer and said upper surface of said via metal layer;
• forming an antifuse material layer over said substantially planar surface;
• defining said antifuse material layer and said via metal layer;
• and
• forming a metal capping layer over said antifuse material layer.

A method for fabricating a metal-to-metal antifuse comprising the steps of:

• forming and defining a first metal interconnect layer;
• forming a first interlayer dielectric layer;
• forming a first antifuse via in said first interlayer dielectric layer to expose said first metal interconnect layer;
• forming a layer of conducting material in said first antifuse via;
• forming a substantially planar surface comprising said layer of conducting material and a planarizing material;
• forming a first capping layer over said layer of conducting material;
• defining said first capping layer and said layer of conducting material;
• forming a second interlayer dielectric layer over said first capping layer;
• forming a second antifuse via in said second interlayer dielectric layer to expose said first capping layer, said second antifuse via substantially aligned with said first antifuse via;
• forming an antifuse material layer at least a portion of which is disposed in said second antifuse via;
• forming a second capping layer over said antifuse material layer;
• and
• defining said antifuse material layer and said second capping layer.

A method for fabricating a metal-to-metal antifuse comprising the steps of:

• forming and defining a first metal interconnect layer;
• forming an interlayer dielectric layer;
• forming an antifuse via in said interlayer dielectric layer to expose said first metal interconnect layer;
• depositing a via metal layer over said interlayer dielectric layer such that said via metal layer is disposed in a portion of the volume defining said antifuse via;
• forming a planarizing layer of an insulating material in said antifuse via sufficient to fill a remaining portion of said volume defining said antifuse via;
• etching said planarizing layer to form a substantially planar surface comprising said interlayer dielectric layer, said planarizing layer and said via metal layer;
• forming a capping layer over said substantially planar surface;
• forming an antifuse material layer over said capping layer;
• forming a metal capping layer over said antifuse material layer;
• and
• defining said antifuse material layer and said metal capping layer.