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US 5,308,792 AGranted
Method for fabricating semiconductor device
AssigneeNEC Corporation
InventorsHidekazu Okabayashi, Shoichi Endo
Life of this patent
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AssigneeNEC Corporation
InventorsHidekazu Okabayashi, Shoichi Endo
Estimating the term…
A method for fabricating a semiconductor device comprises the steps of depositing a metal film for forming interconnections and/or electrodes on an insulating film formed on a substrate and then applying a hydrostatic pressure exceeding atmospheric pressure to the deposited metal film; or comprises the steps of forming a passivation film on a metal film for forming interconnections and/or electrodes, which is formed on a substrate with an insulating film, and then applying a hydrostatic pressure exceeding atmospheric pressure to the passivation film formed. The method makes it possible to substantially improve density and adhesion of the metal film and the insulating film and to produce semiconductor devices equipped with high-quality electrodes or interconnections at a relatively low cost.
A method for fabricating a semiconductor device comprising the steps of depositing a metal film for forming interconnections or electrodes on an insulating film formed on a substrate and then applying a hydrostatic pressure exceeding atmospheric pressure to the surface of the deposited metal film to adhere said metal film to said insulating film.
A method for fabricating a semiconductor device comprising the steps of forming a passivation film on a metal film for forming interconnections or electrodes, which is formed on a substrate with an insulating film, and then applying a hydrostatic pressure exceeding atmospheric pressure to the surface of said passivation film formed to adhere said passivation film and said insulating film to said metal film.
A method for fabricating a semiconductor device comprising the steps of depositing an insulating film on a substrate, depositing an Al interconnection layer on said insulating film and patterning said Al layer to give an Al interconnection having a desired pattern, depositing a PSG film as a passivation film on said insulating film including said Al interconnection, then applying a hydrostatic pressure exceeding atmospheric pressure to the resulting assembly to adhere said PSG film and said insulating film to said Al interconnection, and thereafter depositing an SiN.sub.x film, where X is an integer, as another passivation film on the heat-treated PSG film.
Dependencies are inferred from the claim text.