Mask ROM process
AssigneeUnited Microelectronics Corp.
InventorGary Hong
Life of this patent
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Abstract
A semiconductor device and a method of manufacturing a semiconductor device includes the steps of forming a first conductivity type layer on one surface of a work piece comprising a semiconductor substrate. A gate oxide is formed on the surface of the substrate. A first conductive structure is formed on the gate oxide consisting essentially of polysilicon. An insulating structure is formed in contact with the first conductive structure. Material is removed from the surface of the first conductive structure to expose at least a portion of the surface of the first layer, and to form on the remaining structure on the workpiece a second conductive structure consisting essentially of polysilicon. The polysilicon is in electrical contact with the first conductive structure. Thus, a compound conductive structure is provided on the work piece.
Claims12
A method of manufacturing a semiconductor device, which comprises the steps of
- (a) forming a first conductivity type layer on one surface of a work piece comprising a semiconductor substrate,
- (b) forming a gate oxide layer on the surface of said substrate,
- (c) forming a first conductive structure having edges on said gate oxide layer,
- (d) forming an insulating structure in contact with said first conductive structure,
- (e) removing material from the surface of said first conductive structure to expose at least a portion of the surface beneath said first conductive structure, and
- (f) forming on the remaining structure on said workpiece a second conductive structure in electrical contact with said first conductive structure,
- whereby a compound conductive structure is provided on said work piece.
Dependencies are inferred from the claim text.