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US 5,308,742 AGranted
Method of etching anti-reflection coating
AssigneeAT&T Bell Laboratories
InventorThuy B. Ta
Life of this patent
Estimating the term…
Abstract
A polyimide layer used in manufacturing semiconductor integrated circuits is etched in a plasma comprising O.sub.2, Ar, and CHF.sub.3. The plasma produces excellent critical dimension control and yields good resist to polyimide etching selectivity.
Claims6
A method of manufacturing an integrated circuit comprising the steps of:
- depositing a layer of an organic polymer on a substrate, said polymer being an anti-reflection coating;
- forming a layer of resist over the surface of said organic polymer;
- exposing selected portions of said resist to radiation and removing portions of said resist to expose selected portions of said organic polymer;
- and
- etching said selected portions of said organic polymer in a plasma comprising CHF.sub.3, O.sub.2 and a sputter component, said sputter component having a removal rate, to expose portions of said substrate.
2 more elements
Dependencies are inferred from the claim text.