Processing for forming low resistivity titanium nitride films

A process for forming low resistivity titanium nitride films on a silicon substrate by chemical vapor deposition, said process comprising in combination the steps of:

• a. placing the silicon substrate in a reaction chamber;
• b. heating the silicon substrate within the reaction chamber;
• and
• c. passing NH.sub.3 gas over the heated silicon substrate following deposition of the titanium nitride film to react with residual chlorine retained by the deposited titanium nitride film, thereby lowering the chlorine content of the film and reducing the film sheet resistivity;
• wherein steps a., b. and c. occur in different process chambers and the substrate is transported between the different process chambers through a transport chamber maintained at a vacuum which interconnects the different process chambers.

A process for forming low resistivity titanium nitride films on a silicon substrate by chemical vapor deposition, said process comprising in combination the steps of:

• a. placing the silicon substrate in a reaction chamber;
• b. heating the silicon substrate within the reaction chamber;
• and
• c. passing NH.sub.3 gas over the heated silicon substrate following deposition of the titanium nitride film to react with residual chlorine retained by the deposited titanium nitride film, thereby lowering the chlorine content of the film and reducing the film sheet resistivity;
• wherein steps a., b. and c. occur in different process chambers and the substrate is transported between the different process chambers in an air atmosphere.