Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP)

In semiconductor manufacture a method for forming a void free dielectric layer comprising:

• providing a semiconductor structure including a substrate and patterned conducting lines formed on the substrate with gaps formed between the conducting lines;
• conformally depositing a dielectric material over the conducting lines and into the gaps between the conducting lines to form an initial dielectric layer;
• contouring a topography of the initial dielectric layer by polishing the initial dielectric layer using chemical mechanical planarization (CMP) with a polishing pad soft enough to form the topography of the initial dielectric layer and removing dielectric material along a top surface and sidewalls of the conducting lines to form a contoured dielectric layer;
• controlling process parameters and continuing the contouring for a time period sufficient to achieve a desired topography for the contoured dielectric layer to facilitate a subsequent deposition of additional dielectric material;
• and
• depositing additional dielectric material over the contoured dielectric layer to form a completed dielectric layer without the inclusion of voids in the completed dielectric layer.

In semiconductor manufacture a method for forming and insulating interlevel conductors, comprising:

• forming the conductors on a substrate with gaps between adjacent conductors;
• depositing a dielectric material over the conductors and into the gaps between the conductors to form an initial dielectric layer;
• contouring a topography of the initial dielectric layer by chemically mechanically planarizing the initial dielectric layer using a polishing pad adapted to conform to a topography of the initial dielectric layer to round the corners of the dielectric material and to remove dielectric material along a top surface and sidewalls of the conducting lines to form a contoured dielectric layer;
• controlling process parameters and continuing the contouring for a time period sufficient to achieve a desired contoured topography for the contoured dielectric layer to facilitate a subsequent deposition of additional dielectric material;
• cleaning the contoured dielectric layer and substrate;
• depositing additional dielectric material over the contoured dielectric layer to form a completed dielectric layer that is free of voids;
• and
• planarizing the completed dielectric layer using chemical mechanical planarization.