Semiconductor device having a wiring strip of noble metal and process of fabricating the semiconductor device
AssigneeNEC Corporation
InventorShuji Kishi
Life of this patent
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Abstract
A multi-level wiring structure interconnects circuit components of an integrated circuit fabricated on a semiconductor substrate, and comprises a lower wiring of noble metal covered with an inter-level insulating film, an upper wiring of noble metal extending over the inter-level insulating film, and an inter-level wiring implemented by a tube-shaped metal film filled with a piece of noble metal and passing through the inter-level insulating film for interconnecting the lower and upper wirings so that an electric signal is propagated at high speed without sacrifice of resistivity against migration phenomena.
Claims8
A semiconductor device fabricated on a semiconductor substrate, comprising:
- a multi-level wiring structure formed over said semiconductor substrate, having at least one lower wiring comprised of gold covered with an inter-level insulating film, an upper wiring comprised of nobel metal extending over said inter-level insulating film, and an inter-level wiring having a conductive metal tube formed on an inner surface of a contact hole of said inter-level insulating film and formed of a substance selected from the group consisting of titanium and titanium tungsten alloy and a conductive block of gold and provided in said conductive metal tube for interconnecting said lower and upper wiring, said at least one lower wiring having a titanium-diffused region held in contact with said conductive block and formed through a mutual diffusion between gold atoms and titanium atoms.
A semiconductor integrated circuit device fabricated on a semiconductor substrate, comprising:
- a) circuit components forming parts of an integrated circuit;
- and
- b) a multi-level wiring structure formed over said semiconductor substrate, having at least one lower wiring comprised of gold covered with an inter-level insulating film, an upper wiring of gold extending over said inter-level insulating film, and an inter-level wiring having a conductive metal tube formed on an inner surface of a contact hole of said inter-level insulating film and formed of a substance selected from the group consisting of titanium and titanium tungsten alloy and a conductive block of gold and provided in said conductive metal tube for interconnecting said lower and upper wirings, said at least one lower wiring having a titanium-diffused region held in contact with said conductive block and formed through a mutual diffusion between gold atoms and titanium atoms.
Dependencies are inferred from the claim text.