Field-effect transistor
AssigneeKabushiki Kaisha Toshiba
InventorsNobuhiro Gemma, Koichi Mizushima, Akira Miura, Makoto Azuma, Toshio Nakayama
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Abstract
A field-effect transistor comprising a semiconductor substrate having source and drain regions and a gate electrode, wherein a thin organic film including donor and acceptor molecules is provided between the semiconductor substrate and the gate electrode. When a predetermined voltage is applied to the gate electrode, charge transfer occurs between the donor and acceptor molecules included in the thin organic film, thereby controlling the surface potential of the semiconductor substrate.
Claims13
A field-effect transistor comprising a silicon substrate having a source region and a drain region, and a gate electrode, wherein a thin organic film including donor and acceptor molecules is provided between said silicon substrate and said gate electrode.
Dependencies are inferred from the claim text.