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US 5,294,818 AGranted
MISFET including GaAs substrate and a Group II-VI gate insulator
AssigneeMurata Manufacturing Co., Ltd.
InventorsShigeo Fujita, Shizuo Fujita, Susumu Fukuda
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Abstract
A MISFET includes a GaAs substrate, a gate insulating film of a II-VI group compound including Zn, Mg, S, and Se epitaxially grown on the GaAs substrate, and a gate electrode formed on the gate insulating film.
Claims4
A MISFET comprising:
- GaAs substrate,
- a gate insulating film of a II-VI group compound including Zn, Mg, S, and Se, epitaxially grown on said substrate, and
- a gate electrode formed on said gate insulating film.
The MISFET according to claim s, wherein said gate insulating film has a lattice matching said GaAs substrate.
Dependencies are inferred from the claim text.