Output circuit for charged transfer device and having a high detection sensitivity
AssigneeNEC Corporation
InventorHiromasa Yamamoto
Life of this patent
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Abstract
In an output circuit for a charge transfer device, a floating diffusion region is connected to a source side gate electrode of a double-gate read-out field effect transistor having its drain side gate electrode connected to the drain of the read-out transistor itself. Thus, the capacitance between the gate of the read-out transistor connected to the floating diffusion region and the drain of the read-out transistor can be made small, so that the total capacitance of the floating diffusion region is correspondingly reduced, with the result that a high detection sensitivity can be realized.
Claims4
A charge transfer device associated with an output circuit, comprising a semiconductor substrate of a first conductivity type, a charge transfer section formed on said semiconductor substrate for transferring a signal charge, a floating diffusion formed in said semiconductor substrate adjacent to one end of said charge transfer section and for receiving said signal charge transferred through said charge transfer section, said floating diffusion being of a second conductivity type opposite to said first conductivity type, and a read-out double-gate field effect transistor having a source side gate electrode electrically connected to said floating diffusion and a drain side gate electrode formed separately from said source side gate electrode and connected to a drain of said field effect transistor itself.
Dependencies are inferred from the claim text.