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US 5,294,571 AGranted
Rapid thermal oxidation of silicon in an ozone ambient
AssigneeVLSI Technology, Inc.
InventorsFelix Fujishiro, Chang-Ou Lee, Landon Vines
Life of this patent
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Abstract
Disclosed are methods for preparing SiO.sub.2 layers in semiconductor devices by the rapid thermal oxidation of silicon in an ozone ambient.
Claims17
A method for preparing a SiO.sub.2 layer on a semiconductor device which method comprises the steps of:
- (a) placing a semiconductor device having a surface layer containing silicon in at least a part thereof, into a chamber;
- and
- (b) oxidizing the silicon on the surface of the device to SiO.sub.2 by rapid thermal oxidation under conditions wherein at least a portion of surface of the semiconductor device is oxidized to SiO.sub.2 wherein the oxidation is conducted in an atmosphere comprising oxygen and form about 4 to about 15 volume percent ozone at a temperature from about 850.degree. C. to about 1050.degree. C.
A method for preparing a SiO.sub.2 gate oxide layer on a semiconductor device containing a substrate, channels, and optionally, doped source and drain sites, which method comprises the steps of:
- (a) placing the semiconductor device into a chamber of a rapid thermal processing device;
- (b) oxidizing the silicon on the surface of the device to SiO.sub.2 by rapid thermal oxidation under conditions so as to from a layer of at least 50 .ANG. of SiO.sub.2 on the surface of the substrate, wherein the oxidation is conducted in an atmosphere comprising oxygen and from about 4 to about 15 volume percent ozone at a temperature from about 850.degree. C. to about 1050.degree. C.
Dependencies are inferred from the claim text.