Reduction of foreign particulate matter on semiconductor wafers
AssigneeInternational Business Machines Corporation
InventorsMarshall J. Fleming, Jr., William A. Syverson, Eric J. White
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Abstract
A substantial reduction in the foreign particulate matter contamination on surfaces, such as the surfaces of semiconductor wafers, is achieved by treating the surfaces with a solution comprising a strong acid and a very small amount of a fluorine-containing compound. A preferred method employs a solution containing sulfuric acid, hydrogen peroxide and a very small amount of hydrofluoric acid, which is effective in reducing foreign particulate matter contamination, without significant etching, of the surface being treated.
Claims15
A method of reducing foreign particulate matter concentration on a surface, which comprises contacting said surface with a solution comprising a strong acid and a very small amount of a fluorine-containing compound, which is effective in reducing foreign particulate matter contamination, without significant etching, of said surface, wherein said amount of said fluorine-containing compound is sufficient to establish a chemophobic surface, and said surface is etched at a rate of less than about 20 .ANG./min.
A method of reducing foreign particulate matter concentration on a surface of a semiconductor wafer, which comprises immersing said wafer in a solution comprising a strong acid selected from the group consisting of sulfuric acid, nitric acid and trifluoroacetic acid and a very small amount of hydrofluoric acid, which is effective in reducing foreign particulate matter contamination, without significant etching, of said surface, wherein said amount of hydrofluoric acid is sufficient to establish a chemophobic surface, and said surface is etched at a rate of less than about 5 .ANG./min.
Dependencies are inferred from the claim text.