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US 5,294,505 AGranted
Pattern forming method
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorKazuya Kamon
Life of this patent
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Abstract
Disclosed herein is a method of forming a thin film pattern on a semiconductor substrate, which comprises a step of forming a photosensitive thin film on a semiconductor substrate, a step of exposing the photosensitive thin film with a fine pattern, a step of performing ultrasonic treatment on the exposed thin film, and a step of developing the ultrasonic-treated thin film for forming a fine pattern.
Claims7
A method of forming a thin film pattern on a semiconductor substrate, comprising the steps of:
- forming a photosensitive thin film on said semiconductor substrate;
- exposing a predetermined region on said photosensitive thin film to exposure beams;
- performing ultrasonic treatment on said thin film to attain vibration only in a vertical direction using a medium of liquid while floating said thin film on the surface of said liquid;
- and thereafter
- developing said thin film for forming a fine pattern corresponding to said exposed predetermined region by removing said exposed predetermined region.
2 more elements
A method of forming a thin film pattern on a semiconductor substrate, comprising the steps of:
- forming a photosensitive thin film on said semiconductor substrate;
- exposing a predetermined region on said photosensitive thin film to exposure beams;
- performing ultrasonic treatment on said thin film using a bath of liquid, while said thin film is maintained on the surface of said liquid;
- and thereafter
- developing said thin film for forming a fine pattern.
2 more elements
Dependencies are inferred from the claim text.