Plasma ashing method
AssigneeKabushiki Kaisha Toshiba
InventorsEiji Yamashita, Terumi Muguruma
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Abstract
A plasma ashing method to prevent a generation of a resist-residue buildup is disclosed that includes a step for installation of a substrate on which a photoresist material is formed in a chamber, a step for drawing a vacuum in the chamber and keeping the chamber at a predetermined pressure, a step for filling oxygen gas in the camber and keeping the chamber at approximately 1 Torr, and a step for applying a high-frequency electric power of 0.10 [W/cm.sup.2 ] or less to the oxygen gas. A more effective range of the high-frequency electric power per area of the internal wall of the chamber is from 0.008 to 0.10 [W/cm.sup.2 ]. The most effective value of the high-frequency electric power is 0.055 [W/cm.sup.2 ].
Claims10
A plasma ashing method, comprising:
- a step for installation of a substrate on which a photoresist material is formed in a chamber having an internal wall,
- a step for drawing maintaining a vacuum in the chamber,
- a step for filling a plasma ashing gas in the chamber, and
- a step for supplying a high-frequency electric power to the plasma ashing gas in the chamber,
- wherein the high-frequency electric power per area of the internal wall of the chamber is 0.10 [W/cm.sup.2 ] or less.
A plasma ashing method according to clam 1, wherein the high-frequency electric power per area of the internal wall of the chamber is from 0.008 to 0.10 [W/cm.sup.2 ].
Dependencies are inferred from the claim text.