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US 5,293,075 AGranted
Semiconductor device with PZT/PLZT film and lead-containing electrode
AssigneeSharp Kabushiki Kaisha
InventorsShigeo Onishi, Kazuya Ishihara, Keizo Sakiyama
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Abstract
A semiconductor device comprising an oxide film, an electrode and a PZT or PLZT film formed in this order on a substrate, the electrode being a deposit of platinum containing lead.
Claims3
A semiconductor device comprising:
- a substrate;
- an oxide film formed on the substrate;
- an electrode formed on the oxide film;
- and
- a PZT or PLZT film formed on the electrode;
- the electrode being a deposit of platinum containing lead, wherein said deposit contains 5 to 20 wt. % of lead.
3 more elements
A semiconductor device comprising:
- a substrate;
- an oxide film formed on the substrate;
- an electrode formed on the oxide film;
- and
- a PZT or PLZT film formed on the electrode;
- the electrode being a deposit which contains platinum and lead prior to formation of the PZT or PLZT film, wherein said deposit contains 5 to 20 wt. % of lead.
3 more elements
Dependencies are inferred from the claim text.