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US 5,293,061 AGranted
Semiconductor device having an isolation layer region on the side wall of a groove
AssigneeSeiko Instruments Inc.
InventorTakashi Hosaka
Life of this patent
Estimating the term…
Abstract
Steps or grooves are formed in a surface of a semiconductor substrate of a semiconductor device having a plurality of semiconductor elements, and an isolation layer is formed on regions that include the steps or side walls of the grooves.
Claims16
A semiconductor device comprising:
- a substrate of semiconductor material having an upper surface, there being at least one groove extending into said substrate from said surface, the groove having a bottom and two side walls which extend at an angle of the surface;
- a first impurity diffusion region formed in said surface of said substrate adjacent said groove, at least the first impurity diffusion region containing a first transistor;
- a second impurity diffusion region formed by diffusing impurities into said semiconductor material of said substrate at said bottom of said groove, said second impurity diffusion region having an upper surface which is spaced from said upper surface of said substrate in a direction perpendicular to said upper surface of said substrate, at least the second impurity diffusion region containing a second transistor;
- and
- an isolation layer region formed in at least one side wall of said groove between said first impurity diffusion region and said second impurity diffusion region.
2 more elements
A semiconductor device comprising:
- a substrate of semiconductor material having a surface and provided with at least one groove extending into said substrate from said surface, the groove having a bottom which is spaced from said surface in a direction perpendicular to said surface and two side walls which extend at an angle to the surface and between said groove bottom and said surface;
- a first impurity diffusion region having a first transistor and being formed in said surface of said substrate adjacent said groove;
- a second impurity diffusion region having a second transistor and being formed in said semiconductor material of said substrate at said bottom of said groove so that said second transistor is spaced from said first transistor in the direction perpendicular to said substrate surface;
- and
- an isolation layer region formed in a side wall of said groove between said first and second transistors.
2 more elements
Dependencies are inferred from the claim text.