Process for metal deposition for microelectronic interconnections
AssigneeUniversity of Texas at Austin, Texas
InventorsAdam Heller, Panagiotis Argitis, Joseph C. Carls
Life of this patent
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Abstract
A method for forming interconnections in microelectronic devices, including interconnections through small vias between different layers in the microelectronic devices include the spin coating of a film comprising a polyoxometalate and an organic material on the substrate. The film is optionally patterned by lithography, the polymer is removed, and the polyoxometalate is reduced to a metal layer. The metal layer may in one embodiment provide a nucleating zone for the deposition of metal.
Claims129
A method of selectively forming interconnections in a microelectronic device comprising:
- spin coating on a surface of said microelectronic device a solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a film;
- said polyoxometalate being soluble in water and polar organic solvents and including said one element in a high oxidation state;
- substantially removing the organic constituent of said film;
- and
- reducing the film from which the organic constituent has been substantially removed to a metallic layer.
A method of selectively forming interconnections in a microelectronic device comprising:
- spin-coating on a surface of said microelectric device a solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a radiation sensitive resist film;
- said polyoxometalate being soluble in water and polar organic solvents and including said one element in a high oxidation state;
- lithographically patterning selected regions of said film to remove said film in said selected regions;
- substantially removing said organic constituent of the lithographically patterned film;
- reducing said lithographically patterned film from which said organic constituent has been removed to a patterned metallic layer;
- and
- selectively depositing a metal on said patterned metallic layer.
A method of selectively forming interconnections in a microelectronic device comprising:
- spin-coating on a surface of said microelectronic device a radiation sensitive solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a first film;
- said polyoxometalate being soluble in water and polar organic solvents and including said one element in a high oxidation state;
- lithographically exposing selected regions of said first film;
- removing the unexposed portions of said first film to provide a patterned polyoxometalate film;
- removing the patterned polyoxometalate film from the unexposed regions of said first film;
- substantially removing the organic constituent of said patterned polyoxometalate film to provide a second patterned film
- reducing said second patterned film to a patterned metallic layer;
- and
- selectively depositing a metal on said patterned metallic layer.
A method of selectively forming interconnections in a microelectronic device comprising:
- spin-coating on a surface of said microelectronic device a solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a film;
- said polyoxometalate being soluble in water and polar organic solvents and including said one element in a high oxidation state;
- substantially removing the organic constituent of said film and simultaneously reducing said film to a metallic film in a hydrogen-containing plasma.
The method of forming interconnections in a microelectronic device of claim 59 including the additional steps of:
- microlithographically patterning said film prior to removing at least some of said organic constituent of said film;
- and additionally
- depositing a metal onto the hydrogen plasma reduced film.
A method of forming interconnections in microelectronic devices, having circuitry at at least two different levels that are separated by at least one electrically insulating layer through interconnecting vias extending between sites in circuitry at said different levels comprising:
- said polyoxometalate being soluble in water and polar organic solvents and including said one element in a high oxidation state;
- spin-coating a solution containing a polyoxometalate, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a film covering areas including the vias;
- reducing said film to a metallic layer.
A method of forming interconnections in a microelectronic device, having circuitry at at least two different levels separated by at least one electrically insulated layer, through interconnecting vias extending between sites in circuitry at said different levels comprising:
- spin-coating on a surface of said microelectronic device a solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of Groups V and VI of the periodic table to provide a film covering areas of the surface including the vias;
- removing at least some of said organic constituent of said film;
- reducing said film to a first metallic layer;
- and
- depositing an additional metal layer on said first metallic layer.
A method of forming interconnections in a microelectronic device, having circuitry at at least two different levels that are separated by at least one electrically insulating layer through interconnecting vias extending between circuitry at said different levels comprising:
- spin-coating on exposed surfaces of said microelectronic device and on the walls of said vias a first solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a radiation sensitive resist film covering said exposed surfaces and said via walls;
- said polyoxometalate being soluble in water and polar organic solvents and including said one element in a high oxidation state;
- lithographically patterning said radiation sensitive resist film to remove selected regions from said exposed surfaces;
- substantially removing the organic constituent of the patterned film;
- reducing said patterned film to a patterned metallic layer;
- and
- selectively depositing an additional metal layer on said patterned metallic layer.
A method of forming interconnections in a microelectronic device, having circuitry at at least two different levels separated by at least one electrically insulating layer, through interconnecting vias extending between sites in circuitry at said different levels comprising:
- spin-coating on surfaces of said microelectronic device a first solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a radiation sensitive resist film covering said surfaces and said vias;
- lithographically patterning said radiation sensitive film to remove selected regions thereof and provide a lithographically patterned film;
- removing the polyoxometalate from the regions not covered by said lithographically patterned film to provide a patterned polyoxometalate film covering areas of said microelectronic device including said vias;
- removing said lithographically patterned film;
- removing the unprotected areas of said patterned polyoxometalate film to provide a modified polyoxometalate film;
- substantially removing the organic constituent of said modified polyoxometalate film;
- reducing said modified polyoxometalate film to provide a patterned metallic layer;
- and
- selectively depositing an additional metal layer on said patterned metallic layer.
A method of forming interconnections in a microelectronic device, having circuitry at at least two different levels separated by at least one electronically insulating layer, through interconnecting vias extending between sites in circuitry at different levels comprising:
- spin-coating on said microelectronic device a solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a first film covering said levels of said microelectronic device and the vias;
- spin-coating on said first film a radiation sensitive resist film;
- said polyoxometalate being soluble in water and polar organic solvents and including said one element in a high oxidation state;
- lithographically exposing selected regions of said radiation sensitive resist film on said surfaces of said levels to remove selected regions to provide a lithographically patterned film;
- removing the unexposed portions of said radiation sensitive film on said surfaces of said levels to provide a patterned polyoxometalate film covering said selected surfaces and said vias;
- substantially removing the organic constituent of the unexposed portion of said radiation sensitive film on said surfaces and said vias to provide a modified patterned film;
- reducing said modified patterned film to provide a patterned metallic layer;
- and
- selectively depositing an additional metal layer on the patterned metallic layer.
A method of forming interconnections in a microelectronic device, having circuitry at at least two levels separated by at least one electrically insulating layer, through interconnecting vias extending between sites in circuitry at said different levels comprising:
- spin-coating a solution containing a polyoxometalate, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a film covering the surface areas of said levels and said vias;
- reducing said film to a metallic layer;
- substantially removing the metallic layer from said surfaces of said microelectronic device by anisotropic back etching;
- and
- selectively depositing an additional metal layer on the residual metallic layer in said vias.
A method of forming interconnections in a microelectronic device, having circuitry at at least two different levels separated by at least one electrically insulating layer, through metallized interconnecting vias extending substantially perpendicular between sites in circuitry at said different level comprising:
- spin-coating a first solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a film covering areas including the vias;
- substantially removing the organic constituent of the film;
- reducing said film to a first metallic layer;
- removing said film from selected areas of said levels by anisotropic back etching;
- and
- selectively depositing an additional metal layer on said first metallic layer.
Dependencies are inferred from the claim text.