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AssigneeApplied Materials, Inc.
InventorsTerrance Y. Lee, Fred C. Redeker, Petru N. Nitescu, Robert J. Steger, David W. Groechel, Semyon Sherstinsky, Maya Shendon, Samuel Luong
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An improved plasma etching apparatus is disclosed for the plasma etching of semiconductor wafers. The improvement includes conductive means for inhibiting arcing from electrical charges accumulating on one or more non-conductive protective surfaces on members at rf potential within the apparatus, such as the metal pedestal which supports the wafer being etched and supplies the rf potential to it, and the clamping ring mechanism which clamps the wafer to the pedestal. The conductive means may include one or more conductive plugs extending through one or more of the protective surfaces or a conductive ring surrounding the wafer on the top surface of the metal pedestal. The conductive material is selected from the class consisting of carbon; a silicide; titanium nitride; a carbide; and a semiconductor such as silicon doped to provide a resistivity ranging from about 0.001 to about 20 ohm-cm.
A method for plasma etching a semiconductor wafer without damaging said wafer by arcing from charge buildup on one or more insulation surfaces adjacent said wafer which comprises etching said wafer in a plasma etching apparatus having a plurality of conductive plug means for inhibiting arcing from electrical charges on said one or more insulation members which are located on metal members at rf potential within said apparatus, said conductive plug means extending through said one or more insulation surfaces to said metal members.
A method for plasma etching a semiconductor wafer without damaging said wafer by arcing from charge buildup on one or more insulation surfaces adjacent said wafer which comprises etching said wafer in a plasma etching apparatus containing a metal pedestal having a top surface on which said wafer to be etched is supported;
An improved plasma etching apparatus for the plasma etching of semiconductor wafers to inhibit arcing from electrical charge buildup on one or more protective insulator surfaces on members at rf potential within said apparatus comprising:
An improved plasma etching apparatus for the plasma etching of semiconductor wafers wherein the improvement comprises a plurality of conductive plug means for inhibiting arcing from electrical charges on one or more protective insulation members which are located on metal members at rf potential within said apparatus, said conductive plug means extending through said one or more insulation members to said metal members.
An improved plasma etching apparatus for the plasma etching of semiconductor wafers wherein the improvement comprises a plurality of conductive silicon plug means each having an end portion located in one or more protective insulator members which are located on members at rf potential within said apparatus to inhibit arcing from electrical charges accumulating on said insulator members, said silicon plug means extending through said one or more protective insulator members to said members at rf potential, said silicon plug means being doped with a sufficient amount of one or more dopants selected from the group consisting of boron, phosphorus, antimony, and arsenic to provide a resistivity of not greater than about 20 ohm-cm.
An improved plasma etching apparatus for the plasma etching of semiconductor wafers having a metal pedestal at rf potential within said apparatus which supports said wafer, wherein the improvement comprises a first ring of protective insulation material covering a portion of an exposed top surface of said metal pedestal immediately surrounding said wafer thereon;
An improved plasma etching apparatus for the plasma etching of semiconductor wafers to inhibit arcing from electrical charge buildup on one or more protective surfaces on members at rf potential within said apparatus comprising:
An improved plasma etching apparatus for the plasma etching of semiconductor wafers to inhibit arcing from electrical charge buildup on one or more protective insulator surfaces on members at rf potential within said apparatus comprising:
An improved plasma etching apparatus for the plasma etching of semiconductor wafers wherein said apparatus includes a metal pedestal and a clamping ring mechanism at rf potential within said apparatus, said clamping ring mechanism including a metal clamping ring which urges said wafer against said metal pedestal and one or more surfaces on said clamping ring mechanism covered with insulation material to protect said clamping ring mechanism from attack by said plasma etching, wherein said improvement comprises one or more plugs constructed of conductive material which extend from the surface of said insulation material to at least the metal surface of said clamping ring for inhibiting arcing from electrical charge buildup on said insulation material on said clamping ring.
An improved plasma etching apparatus for the plasma etching of semiconductor wafers wherein the improvement comprises a plurality of conductive silicon plug means each having an end portion located in one or more protective insulator members which are located on members at rf potential within said apparatus to inhibit arcing from electrical charges accumulating on said insulator members, said conductive silicon plug means extending through said one or more protective insulator members to said members at rf potential, said conductive silicon plug means having a resistivity of less than about 100 ohm-cm.
An improved plasma etching apparatus for the plasma etching of semiconductor wafers having a metal pedestal at rf potential within said apparatus which supports said wafer, wherein the improvement comprises a first ring of protective insulation material covering a portion of an exposed top surface of said metal pedestal immediately surrounding said wafer thereon;
Dependencies are inferred from the claim text.