Back to results
US 5,290,713 AGranted
Process of manufacturing a semiconductor device by using a photoresist mask which does not encircle an area of implanted ions
AssigneeNEC Corporation
InventorShigeharu Matsumoto
Life of this patent
Estimating the term…
Abstract
A photoresist mask composed of a plurality of isolated plane patterns having no opening is formed on a main surface of a semiconductor substrate. The breakdown of the gate oxide film due to charge build up can be prevented because no photoresist mask opening patterning is involved.
Claims3
A process of manufacturing a semiconductor device, comprising the steps of:
- forming a photoresist mask on a main surface of a semiconductor substrate in such a manner that photoresist does not encircle an area in which ions are to be implanted;
- and
- implanting ions into said area.
Dependencies are inferred from the claim text.