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US 5,289,027 AGranted
Ultrathin submicron MOSFET with intrinsic channel
AssigneeHughes Aircraft Company
InventorsKyle W. Terrill, Prahalad K. Vasudev
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Abstract
A submicron MOSFET is fabricated on an ultrathin layer with a generally intrinsic channel having a dopant concentration less than about 10.sup.16 cm.sup.-3. The channel thickness is preferably no greater than about 0.2 microns; the ratio of channel thickness to length is less than about 1:4, and preferably no greater than about 1:2. Punchthrough and other short-channel effects are inhibited by the application of an appropriate back-gate voltage, which may also be varied to adjust the voltage threshold.
Claims1
A metal-oxide-semiconductor field transistor (MOSFET) structure, comprising:
- a first insulating layer, the thickness of said first insulating layer being within the approximate range of 0.3-0.5 microns,
- a submicron-thick semiconductor layer on said first insulating layer, said semiconductor layer having mutually spaced doped source and drain regions and a generally intrinsic bulk channel region of bulk semiconductor material extending between said source and drain regions, said channel region having a dopant concentration less than about 10.sup.16 cm.sup.-3,
- a second insulating layer on said channel region,
- a conductive gate on said insulating layer, and
- means for applying a back-gate bias voltage to induce both charge carriers in the channel region for MOSFET operation, and an electric field in the channel region for restricting punchthrough and other short-channel effects,
- said means for applying a back-gate bias voltage comprising a semiconductor substrate for said first insulating layer, and a conductive electrode on said substrate for receiving a voltage signal.
3 more elements
Dependencies are inferred from the claim text.