Integrated circuit having a boosted node

An integrated circuit having a first voltage boosting circuit comprising a field effect transistor having source/drain regions of a given conductivity type formed in a first tub region of the opposite conductivity type, with said boosting circuit producing on said source/drain regions a first boosted voltage level greater than a given power supply voltage,

• Characterized in that a given one of said source/drain regions is electrically connected to said first tub region, whereby the voltage on said first tub region is elevated to said first boosted voltage level, and wherein said integrated circuit further comprises an additional voltage boosting circuit comprising field effect transistors having source/drain regions of said given conductivity type formed in an additional tub region of said opposite conductivity type that is isolated from said first tub region, whereby the boosted voltage level from said first voltage boosting circuit is further boosted by said additional voltage boosting circuit to a second boosted voltage level greater than said first boosted voltage level.

An integrated circuit having a first voltage boosting circuit comprising a field effect transistor having source/drain regions of a given conductivity type formed in a first tub region of the opposite conductivity type, with said boosting circuit producing on said source/drain regions a first boosted voltage level greater than a given power supply voltage,

• Characterized in that a given one of said source/drain regions is electrically connected to said first tub region, whereby the voltage on said first tub region is elevated to said first boosted voltage level, and wherein said first voltage boosting circuit further comprises a boosting capacitor that is formed by the gate capacitance of a field effect transistor having source/drain regions of said given conductivity type.