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US 5,289,016 AGranted
Thin film transistor with excellent stability for liquid crystal display
AssigneeNEC Corporation
InventorKesao Noguchi
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Abstract
The thin-film transistor for liquid crystal display according to the present invention has an inverted-staggered structure in which source and drain electrodes are formed above a gate electrode on a glass substrate, and comprises a nondoped amorphous silicon film as a channel region just above the gate electrode, and a borosilicate glass film formed on the amorphous silicon film. Preferably, the transistor further includes a silicon nitride film formed over the borosilicate glass film.
Claims12
A thin film transistor, comprising:
- a gate electrode;
- a semiconductor layer formed on said gate electrode;
- a source electrode and a drain electrode formed on said semiconductor layer;
- a borosilicate glass film formed on said semiconductor layer and said source and drain electrodes;
- and
- a silicon nitride film formed on said borosilicate glass film.
3 more elements
A liquid crystal display, comprising:
- a plurality of pixel electrodes and a plurality of thin film transistors respectively connected to said pixel electrodes, wherein each of said thin film transistors includes:
- a gate electrode;
- a semiconductor layer formed on said gate electrode;
- a source electrode and a drain electrode formed on said semiconductor layer;
- a borosilicate glass film formed on said semiconductor layer and said source and drain electrodes;
- and
- a silicon nitride film formed on said borosilicate glass film.
4 more elements
Dependencies are inferred from the claim text.