Semiconductor device having a vertical quantum well via and method for making

A semiconductor device having a vertical quantum well via comprising:

• a substrate having an upper surface;
• a first transistor formed on the upper surface in a first horizontal plane parallel to the upper surface, wherein the first transistor includes a first source/drain region, a second source/drain region and a channel region;
• a second transistor formed in a second horizontal plane vertically spaced from the first horizontal plane, wherein the second transistor includes a first source/drain region, a second source/drain region, and a channel, wherein a first quantized energy level of the source/drain regions of the first transistor is substantially equal to a first quantized energy level of the source/drain regions of the second transistor;
• and
• a semiconductor via electrically coupling one source/drain region of the first transistor to one source/drain region of the second transistor so as to provide current for operation of the first and second transistors, wherein the semiconductor via has a first quantized energy level capable of alignment with the quantized energy levels of the source/drain regions of the first and second transistors.