Method of forming wiring of semiconductor device

A method of forming wiring of a semiconductor device, comprising the steps of:

• forming a doped region in a semiconductor substrate;
• forming a first insulating film having a via-hole in which a portion of said doped region is exposed, on said semiconductor substrate;
• depositing a first conductor film over said first insulating film and said via-hole;
• selectively etching said first conductor film to form a groove which surrounds said via-hole at predetermined distance from the via-hole and to leave the remaining portion thereof on said second insulating film;
• irradiating the whole surface with a laser beam to make the portion of said first conductor film from the edge of said via-hole to said groove flow into said via-hole, so that a conductor plug is formed within said via-hole;
• and
• forming a second conductor film in contact with said conductor plug.

A method of forming wiring of a semiconductor device, comprising the steps of:

• forming a first conductor film on a first insulating film formed on a semiconductor substrate;
• forming a second insulating film having a via-hole on said first conductor film and first insulating film;
• depositing a second conductor film over said second insulating film and said via-hole;
• selectively etching said second conductor film to leave a portion thereof surrounding said via-hole and lying in said via-hole;
• irradiating said portion of said second conductor film with a laser beam through a mask having a transparent portion corresponding to said portion to make said portion flow into said via-hole, so that a conductor plug is formed within said via-hole;
• and
• forming a third conductor film on said conductor plug and said second insulating film and in contact with said conductor plug.