Vapor deposition method and apparatus for producing an EL thin film of uniform thickness

Abstract

There is provided a vapor deposition method for depositing a deposition material of an evaporation source on a substrate while a temperature of the substrate is uniformly kept. The method is implemented in a vapor deposition apparatus in which the evaporation source comprising the deposition material is opposed to the substrate in a vacuum chamber, a heater for heating the substrate is provided across the substrate from the evaporation source in the vacuum chamber and an equalizing plate is provided between the substrate and the heater. In addition, the equalizing plate is larger in size than the substrate and its thermal conductivity is 200 W.multidot.m.sup.-1 .multidot.K.sup.-1 or more and an infrared energy emissivity is 0.2 or more.

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