Silicon epitaxial reactor and control method
AssigneeMotorola, Inc.
InventorsCurtis L. Burt, John W. Steele
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Abstract
An epitaxial reactor (10) includes a bell jar (11) wherein epitaxial depositions are performed. During an epitaxial deposition cycle, the temperature of the bell jar (11) is monitored by an infrared detector (22). After the temperature reaches a predetermined value, initiation of further epitaxial deposition cycles is inhibited. The control method extends the useful lifetime of heating lamps (12) and bell jar seals thereby reducing the cost of semiconductor wafers (16).
Claims14
A method of controlling a silicon epitaxial reactor comprising:
- providing a silicon epitaxial reactor having a quartz bell jar;
- positioning an infrared sensor near an external surface of the quartz bell jar;
- coupling an output of the infrared sensor to a controller that controls initiating an epitaxial deposition cycle within the silicon epitaxial reactor;
- monitoring a temperature of the quartz bell jar by using the infrared sensor for monitoring infrared radiation emitted from the quartz bell jar and from a silicon haze on an inside surface of the bell jar during an epitaxial deposition cycle;
- and
- inhibiting initiation of an epitaxial deposition cycle a first number of epitaxial deposition cycles after the temperature reaches a first value wherein the inhibiting is performed by the controller.
A method of controlling an epitaxial reactor comprising:
- providing an epitaxial reactor having a bell jar;
- monitoring a temperature of the bell jar during an epitaxial deposition cycle;
- and
- inhibiting initiation of an epitaxial deposition cycle within the epitaxial reactor a first number of epitaxial deposition cycles after the temperature reaches a first value.
An epitaxial reactor comprising:
- a bell jar;
- an infrared detector positioned to accept infrared radiation emitted by the bell jar, the infrared detector having an input and an output;
- and
- a controller having an input coupled to the output of the infrared detector wherein the controller controls initiation of an epitaxial deposition cycle within the epitaxial reactor.
Dependencies are inferred from the claim text.