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AssigneeNihon Shinku Gijutsu Kabushiki Kaisha
InventorsKyuzo Nakamura, Michio Ishikawa, Kazuyuki Ito, Noriaki Tani, Masanori Hashimoto, Yoshifumi Ota
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An in-line type chemical vapor deposition apparatus having an etching device for cleaning at least substrate holders, which is provided downstream of the substrate unloading station in which the processed substrates are removed from the substrate holders at atmosphere pressure. The etching device comprises a plasma etching means in which the substrate holders are positioned on an anode side or a dry-etching means in which the substrate holders are positioned on a cathode side, thereby reducing the down time of the apparatus without any influence of an exfoliation of an adhered film from the substrate holders or other portions.
An in-line type CVD apparatus comprising a substrate loading chamber in which a substrate to be treated is mounted on a substrate holder under an atmosphere pressure, a preparatory chamber being evacuated in which the substrate is pre-treated, a processing chamber in which a desired film is formed on the substrate, a substrate withdrawing chamber, a substrate unloading chamber in which the processed substrate is dismounted from the substrate holder, an etching chamber provided subsequent to the substrate unloading chamber for etching at least the substrate holder without the processed substrate in a vacuum condition, said etching chamber being provided with an RF cathode member which is movable together with said substrate holder, the substrate unloading chamber being connected to the substrate loading chamber via the etching chamber, a plurality of gate valves each of which is provided between the adjacent chamber, and means for transporting at least the substrate holder sequentially through the respective chambers.
An in-line type CVD apparatus comprising:
Dependencies are inferred from the claim text.