Deflected flow in chemical vapor deposition cell
AssigneeBell Communications Research, Inc.
InventorRajaram Bhat
Life of this patent
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Abstract
A reactor cell for use in organo-metallic chemical vapor deposition (OMCVD). Multiple precursor gases are combined in a supply tube (14). A deflector section (56) connected to the supply tube consists of three tubes (58, 60, 61) joined at right angles to each other and to the supply tube in order to maximize the turbulence in the gas flow and to thereby uniformly mix the gas. The last of the three tubes is perpendicularly joined to a tapered section (30) of rectangular cross-section that tapers outwardly toward a deposition chamber (22) of rectangular cross section containing a heated susceptor (18) holding the wafer (20) over which the uniformly mixed gas flows and cracks, thereby epitaxially depositing some of its constituents on the wafer.
Claims4
In a reactor cell for use in a chemical vapor deposition system and having
- a deposition chamber for holding a substrate for chemical vapor deposition thereupon from a gas flowing through said chamber substantially along a gas flow axis extending along a median of said deposition chamber while said substrate is held within said chamber with a normal of its principal face being inclined to said axis at a substantially non-zero angle and
- an input port for supplying said gas, the improvement comprising
- means interposed between said input port and said deposition chamber for uniformly mixing the gas composition whereby the gas flows through the deposition chamber uniformly across its cross section, said means comprising a deflection section having a plurality of right angle corners through which said gas flows between said input port and said deposition chamber so that the gas is injected into the deposition chamber perpendicular to and onto said gas flow axis.
Dependencies are inferred from the claim text.