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US 5,284,795 AGranted
Thermal annealing of semiconductor devices
AssigneeMotorola, Inc.
InventorsHenri Gay, Denis Griot, Irenee Pages
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Abstract
A method of processing a semiconductor device in which a microwave field is generated to surround the semiconductor device while a focussed electron beam or ion beam is applied to the substrate of the device whereby the presence of the electron or ion beam creates a conductive region which increases the microwave field intensity in that region, so that the intensified microwave field creates a local heating effect in the substrate to perform a local annealing action.
Claims7
A method of processing a semiconductor device comprising the steps of:
- generating a microwave field;
- generating an electron or ion beam;
- and
- applying the microwave field to surround a semiconductor device substrate and while said microwave field is applied, focusing said electron or ion beam on a portion of said semiconductor device substrate whereby the presence of the electron or ion beam creates a conductive region which increases the microwave field intensity in said region so that the intensified microwave field creates a local heating effect in said semiconductor device substrate to perform a local annealing action.
1 more element
Dependencies are inferred from the claim text.