CVD method for forming metal boride films using metal borane cluster compounds
AssigneeSyracuse University
InventorJames T. Spencer
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Abstract
Metal or metal boride films are deposited by CVD using a metal borane cluster compound as a precursor. For a nickel film, NiCl.sub.2 is vaporized in a reactor tube in the presence of B.sub.10 H.sub.14 or another polyborane. For an aluminum film, Al(BH.sub.4).sub.3 is formed by reacting AlCl.sub.3 with NaBH.sub.4, and using the Al(BH.sub.4).sub.3 as a precursor borane cluster compound. The substrate is heated to a selected temperature so that the deposited film has a controlled stoichiometry of metal and boron.
Claims13
Process of deposition of a film of a metallic element with boron such that the metallic element has a purity of up to 99.9%, where the metallic element is a transition metal element, comprising the steps of
- forming a borane cluster compound of said metallic element by reacting a salt of said element with a polyborane, and
- contacting a vapor of said borane cluster compound, under vacuum conditions, onto a heated substrate to deposit said film thereon,
- while maintaining a temperature of said substrate to produce said film with a ratio of boron to said metallic element.
Process of deposition of a film of a metallic element with boron such that the metallic element has a purity of up to 99.9%, where the metallic element is a main group metal element selected from the group consisting of group IIIA, group IVA, group VA and group VIA, comprising the steps of
- forming a borohydride cluster compound by reacting a salt of said metallic element with a borohydride salt, and
- contacting a vapor of said borohydride cluster compound, under vacuum conditions, onto a heated substrate to deposit said film thereon, while
- maintaining a temperature of said substrate to produce said film with a ratio of boron to said metallic element.
Dependencies are inferred from the claim text.