Method for anisotropic dry etching of metallization layers, containing aluminum or aluminum alloys, in integrated semiconductor circuits

In a method for anisotropic dry etching of metallization layers containing aluminum or aluminum alloys, in integrated semiconductor circuits, using an etching mask for forming conduction lines, the improvement which comprises etching with a strictly anisotropically attacking etching gas mixture containing an iodide compound being volatile under normal conditions, and a substance selected from the group consisting of a simple carbon compound, a simple nitrogen compound and a simple oxygen compound, and forming an accurately defined vertical profile of the conduction lines.

A method for anisotropic dry etching of metallization layers containing aluminum or aluminum alloys, in integrated semiconductor circuits, using an etching mask for forming conduction lines, with the improvement which comprises etching with a strictly anisotropically attacking etching gas mixture containing hydrogen iodide, and forming an accurately defined vertical profile of the conduction lines without sidewall passivation and without corrosion.

A method for anisotropic dry etching of metallization layers containing aluminum or aluminum alloys, in integrated semiconductor circuits, using an etching mask for forming conduction lines, the improvement which comprises etching with a strictly anisotropically attacking etching gas mixture containing hydrogen iodide, and forming an accurately defined vertical profile of the conduction lines without sidewall passivation and without corrosion, in the submicron range.