Method of forming trench buried wiring for semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsMasaharu Aoyama, Masahiro Abe
Life of this patent
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Abstract
A method of forming a trench buried wiring on a semiconductor device. The method includes the steps of: forming a trench in a first insulating film formed on a semiconductor substrate, by using as a mask a photoresist layer, the trench having substantially an upright step; depositing a first electrode material on the surface of the photoresist layer and on the bottom of the trench, while leaving the photoresist layer; removing the photoresist layer and the first electrode material on the photoresist layer while leaving the first electrode material only on the bottom of the trench; and filling a second electrode material in the trench to form a composite electrode with the second electrode material being superposed on the first electrode material.
Claims17
A method of forming a trench buried wiring on a semiconductor device, comprising:
- a first step of depositing a first insulating film on an intermediate semiconductor device, said intermediate semiconductor device having a layer formed on a semiconductor substrate, said layer having a first opening extending to the surface of said substrate, and said first insulating film being deposited on the surface of said layer and buried in said first opening;
- a second step of forming a photoresist layer on said first insulating film, and patterning said photoresist layer to form a photoresist mask, said photoresist mask having a second opening above said first opening;
- a third step of anisotropically etching said first insulating film using said photoresist mask to form a third opening in said first insulating film, said third opening extending to the surface of said substrate via said first opening, and said first insulating film leaving as a side wall on the inner wall of said first opening;
- a fourth step of depositing a first electrode material on said photoresist mask and on the bottom of said substrate exposed in said first opening;
- a fifth step of removing said photoresist mask and said first electrode material on said photoresist mask, said first electrode material being left only in said first opening as a first electrode;
- and
- a sixth step of burying a second electrode material in said first to third openings to form a composite electrode with a second electrode being laid over said first electrode.
A method of forming a trench buried wiring on a semiconductor device, comprising:
- a first step of depositing a first insulating film on an intermediate semiconductor device, said intermediate semiconductor device having a layer formed on a semiconductor substrate, said layer having a first opening extending to the surface of said substrate, said first insulating film being deposited on the surface of said layer and buried in said first opening;
- a second step of forming a photoresist layer on said first insulating film, and patterning said photoresist layer to form a photoresist mask, said photoresist mask having a second opening above said first opening;
- a third step of anisotropically etching said first insulating film using said photoresist mask to form a third opening in said first insulating film, said third opening extending to the surface of said substrate via said first opening;
- a fourth step of depositing a first electrode material on said photoresist mask and on the bottom of said substrate exposed in said first opening;
- a fifth step of removing said photoresist mask and said first electrode material on said photoresist mask, said first electrode material being left only in said first opening as a first electrode;
- and
- a sixth step of burying a second electrode material in said first to third openings to form a composite electrode with a second electrode being laid over said first electrode.
Dependencies are inferred from the claim text.