Exhaust apparatus for epitaxial growth system
AssigneeNEC Corporation
InventorTomoiku Nakano
Life of this patent
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Abstract
An exhaust apparatus for an epitaxial growth system includes an exhaust pipe, a dust filter, and a liquid nitrogen trap. The exhaust pipe performs exhaustion of a reaction furnace in which a reaction gas is supplied to grow a thin film on a semiconductor wafer. The dust filter traps reaction products which have not been used for growing the thin film on the semiconductor wafer, and the dust filter is arranged in the exhaust pipe. The liquid nitrogen trap is arranged in the exhaust pipe in series with the dust filter.
Claims5
An exhaust apparatus for an epitaxial growth system, comprising:
- an exhaust pipe for performing exhaustion of a reaction furnace in which a reaction gas is supplied to grow a thin film on a semiconductor wafer;
- a dust filter, arranged in said exhaust pipe, for trapping reaction products which have not been used for growing the thin film on said semiconductor wafer;
- and
- a liquid nitrogen trap arranged in said exhaust pipe in series with said dust filter.
An exhaust apparatus for an epitaxial growth system, comprising:
- an exhaust pipe for exhausting a reaction furnace in which a reaction gas is supplied to grow a thin film on a semiconductor wafer;
- a dust filter, arranged in said exhaust pipe, for trapping reaction products which have not been used for growing the thin film on said semiconductor wafer;
- a liquid nitrogen trap arranged in said exhaust pipe in series with said dust filter;
- and
- a pair of stop valves arranged in said exhaust pipe on inlet and outlet sides of said liquid nitrogen trap, and a high-pressure air line for supplying high-pressure air to said liquid nitrogen trap when said stop valves are closed.
Dependencies are inferred from the claim text.