Physical vapor deposition dual coating process
AssigneeHauzer Industries bv
InventorsHarbhajan S. Randhawa, Jeffrey M. Buske
Life of this patent
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Abstract
A machine for covering a substrate (FIG. 14, 540) by means of both cathodic arc plasma deposition (CAPD) (FIG. 2) and magnetron sputtering (FIG. 1) without breaking vacuum in a single chamber (FIG. 14, 421). A computer system monitors (FIG. 3, 403, 405) and controls all coating process parameters to coat in any sequence multiple thin film layers using either the CAPD or magnetron sputtering process. A rotating substrate table (FIG. 14, 470) used in conjunction with internal and external targets coats both sides of the substrate simultaneously.
Claims6
A method for sequentially depositing discrete first and second thin film coatings on a substrate, comprising the steps of:
- a) placing the substrate in a chamber;
- b) evacuating the chamber;
- c) activating a CAPD target/cathode in the chamber;
- d) depositing one of said thin film coatings by CAPD on the substrate;
- e) deactivating said CAPD target/cathode;
- f) injecting a process gas into the chamber;
- g) activating a magnetron sputtering target/cathode in the chamber after said CAPD target/cathode is deactivated;
- h) creating a plasma discharge in the chamber;
- and
- i) depositing one of said thin film coatings by magnetron sputtering on the substrate.
Dependencies are inferred from the claim text.