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US 5,221,423 AGranted
Process for cleaning surface of semiconductor substrate
AssigneeFujitsu Limited
InventorsRinshi Sugino, Takashi Ito
Life of this patent
Estimating the term…
Abstract
The surface of a semiconductor substrate is cleaned effectively by etching the surface by placing the substrate in a halogen containing atmosphere, irradiating the atmosphere and the semiconductor surface with ultraviolet rays, and wet solution cleaning of the formed reactant from the substrate surface.
Claims5
A process for treating a surface of a semiconductor substrate containing metal contaminants, said process comprising the steps of:
- placing the semiconductor substrate in a plasma-free atmosphere containing high purity chlorine gas and irradiating at least one of the atmosphere above the semiconductor substrate and the surface of the semiconductor substrate with ultraviolet rays to excite the chlorine gas in the atmosphere without forming a plasma, thereby forming chlorine radicals which etch the surface of the semiconductor substrate, bond with the contaminant metals from within the semiconductor substrate and form a reaction product with substrate constituting material on the surface of the substrate;
- removing the substrate from the plasma free atmosphere;
- and
- wet cleaning the surface of the semiconductor substrate with a cleaning solution to remove the reaction product, as well as the metal contaminants bonded to the chlorine radicals.
1 more element
A process for treating a surface of a silicon semiconductor substrate containing metal contaminants, said process comprising the steps of:
- etching a surface of the silicon semiconductor substrate by placing the substrate in a substantially plasma-free atmosphere containing high purity chlorine gas and irradiating at least the atmosphere above the substrate and the surface of the semiconductor substrate with ultraviolet rays to excite the chlorine gas, thereby forming chlorine radicals which etch the surface of the semiconductor substrate, bond with the contaminant metals from within the semiconductor substrate and form a reaction product with substrate constituting material on the surface of the substrate;
- removing the substrate from the plasma-free atmosphere;
- rinsing the substrate;
- wet cleaning the surface of the substrate with an aqueous fluoric acid solution;
- rinsing the substrate;
- wet cleaning the surface of the substrate with an aqueous solution containing hydrogen peroxide and ammonia;
- and
- rinsing the substrate, said rinsing and wet cleaning steps removing the reaction product, as well as the metal contaminants bonded to the chlorine radicals.
5 more elements
Dependencies are inferred from the claim text.