Selective chemical vapor deposition of aluminum, aluminum CVD materials and process for preparing the same

Abstract

This invention provides a process for forming with high selectivity an Al film having good electrical conductivity at the uncoated portions of a substrate coated with a masking material by means of chamical vapor deposition, using an Al selective deposition material having good electrical conductivity without subjecting it preliminarily to cracking, characterized in that the process employs a molecular compound of trimethyl aluminum and dimethyl aluminum hydride as a starting material gas. This invention also provides an Al selective CVD material characterized in that it is an organic Al compound represented by the following formula: (CH.sub.3).sub.3 Al--(CH.sub.3).sub.2 AlH obtained through intermolecular binding between trimethyl aluminum and dimethyl aluminum hydride. This invention further provides a process for forming the Al selective CVD material, which comprises mixing a liquid trimethyl aluminum with a liquid dimethyl aluminum hydride in an inert gas atmosphere, followed by vacuum distillation of the mixture to give the desired compound represented by the above formula.

Dependencies are inferred from the claim text.